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Photoelectronic properties of the GaAs:Si epitaxial layers on the GaAs substrate

✍ Scribed by Z Czekała-Mukalled; S Kuźmiński; M Tz.xl;laczaz.xl;la

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
284 KB
Volume
46
Category
Article
ISSN
0042-207X

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The Mechanism as SI GaAs Substrate Influences the Resistivity of the Epitaxial Layer
✍ K. Somogyi 📂 Article 📅 1992 🏛 John Wiley and Sons 🌐 English ⚖ 387 KB 👁 2 views

## Abstract It is known that it is possible to grow a semi‐insulating or, at least, a high resistivity GaAs epitaxial layer without doping on an SI GaAs substrate by VPE. The SI substrate is suspected as the originator of the high resistivity intermediate layer and diffusion and/or out‐diffusion ar