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Comparison of Dopant Concentrations Determined by Photoluminescence and Hall Effect in Si:B, P

โœ Scribed by Dipl.-Phys G. Schramm; Dr. sc. nat. R. Herzog; Dipl-Ing. E. Zuber

Publisher
John Wiley and Sons
Year
1991
Tongue
English
Weight
141 KB
Volume
26
Category
Article
ISSN
0232-1300

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Calibration curves to determine P, B, and A1 concentrations in silicon at 4.2 K from the intensity ratios of bound (BE) and free (FE) exciton related luminescence are presented. The integral relative intensities of the peaks are used besides the peak height ratios. By means of a large number of samp

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