๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Comparison of compensation ratios determined by photoluminescence and electrical methods in epitaxial GaAs

โœ Scribed by Phil Won Yu

Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
326 KB
Volume
27
Category
Article
ISSN
0038-1098

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Comparison of P- and B-Contents in Si De
Comparison of P- and B-Contents in Si Determined by Photoluminescence (PL) at 4.2 K and 2.0 K
โœ Dipl.-Phys G. Schramm ๐Ÿ“‚ Article ๐Ÿ“… 1991 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 255 KB

Calibration curves to determine the concentrations of shallow impurities in Si were usually established with the help of homogeneous doped samples at 4.2 K. The improvement of the lateral resolution power necessary to characterize inhomogeneous samples can be conveniently achieved by the use of supe