𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Comparative study of LPE and VPE silicon thin film on porous sacrificial layer

✍ Scribed by A. Fave; S. Quoizola; J. Kraiem; A. Kaminski; M. Lemiti; A. Laugier

Book ID
113936562
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
471 KB
Volume
451-452
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Structure and optical properties of poro
Structure and optical properties of porous silicon prepared on thin epitaxial silicon layer on silicon substrates
✍ M. Balarin; O. Gamulin; M. Ivanda; V. Djerek; O. Celan; S. Music; M. Ristic; K. πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 743 KB

Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi

Structural, optical and electrical chara
Structural, optical and electrical characterization of porous silicon prepared on thin silicon epitaxial layer
✍ M. Balarin; O. Gamulin; M. Ivanda; M. KosoviΔ‡; D. RistiΔ‡; M. RistiΔ‡; S. MusiΔ‡; K πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 763 KB

Silicon-on insulator (SOI) wafers, consisting of 22 lm thick p-type silicon epitaxial layer grown on 280 lm thick n-type (1 1 1) silicon substrate, were electrochemically etched in hydrofluoric acid (HF) to produce porous silicon (PS) samples. The pores of different size and different depth were obt