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Comparative study of epitaxial growth of Pt and Ir electrode films grown on MgO-buffered Si(100) by PLD

✍ Scribed by T.L. Chen; X.M. Li; S. Zhang; X. Zhang


Publisher
Springer
Year
2005
Tongue
English
Weight
211 KB
Volume
80
Category
Article
ISSN
1432-0630

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MgO thin films have been grown on Si 100 substrates at low temperatures of 500-8508C by metal-organic molecular Ε½ . beam epitaxy MOMBE using the solid precursor magnesium acetylacetonate. Oxygen plasma is required to achieve Ε½ . deposition. The composition of the films was determined by Auger electr