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Comparative studies of Pt and Ir schottky contacts on undoped Al0.36Ga0.64N

✍ Scribed by Y. Guhel; B. Boudart; E. Delos; M. Germain; Z. Bougrioua

Book ID
108210601
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
159 KB
Volume
46
Category
Article
ISSN
0026-2714

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## Abstract The electrical properties and interfacial reactions of Pt/Ru Schottky contacts on n‐type gallium nitride (GaN) have been investigated as a function of annealing temperature. The calculated Schottky barrier height (SBH) of the as‐deposited Pt/Ru Schottky contact is found to be 0.69 eV cu