𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Pt and PtSix Schottky contacts on n‐type β‐SiC

✍ Scribed by Papanicolaou, N. A.; Christou, A.; Gipe, M. L.


Book ID
111909950
Publisher
American Institute of Physics
Year
1989
Tongue
English
Weight
757 KB
Volume
65
Category
Article
ISSN
0021-8979

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Electrical characteristics and interfaci
✍ Reddy, N. Nanda Kumar ;Reddy, V. Rajagopal ;Choi, C.-J. 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 687 KB

## Abstract The electrical properties and interfacial reactions of Pt/Ru Schottky contacts on n‐type gallium nitride (GaN) have been investigated as a function of annealing temperature. The calculated Schottky barrier height (SBH) of the as‐deposited Pt/Ru Schottky contact is found to be 0.69 eV cu

Structural, electrical, and surface morp
✍ Reddy, V. Rajagopal ;Reddy, D. Subba ;Naik, S. Sankar ;Choi, C.-J. 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 884 KB

## Abstract We have investigated the electrical and structural properties of Pt/Ti metallization scheme on n‐type InP as a function of annealing temperature using current–voltage (__I__–__V__), capacitance–voltage (__C__–__V__), Auger electron spectroscopy (AES), and X‐ray diffraction (XRD) measure