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Comparative analysis of accelerated ageing effects on power RF LDMOS reliability

✍ Scribed by M.A. Belaïd; K. Ketata; K. Mourgues; H. Maanane; M. Masmoudi; J. Marcon

Book ID
108210590
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
410 KB
Volume
45
Category
Article
ISSN
0026-2714

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This paper presents a synthesis of temperature effects on power RF Laterally Diffused (LD) MOS performances, which can modify and degrade transistor physical and electrical behaviour. In this work, the temperature influence on device electrical characteristics is discussed with regard to physical li