𝔖 Bobbio Scriptorium
✦   LIBER   ✦

An analysis of small-signal gate-drain resistance effect on RF power MOSFETs

✍ Scribed by Yo-Sheng Lin; Shey-Shi Lu

Book ID
114616972
Publisher
IEEE
Year
2003
Tongue
English
Weight
424 KB
Volume
50
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

An analysis of the kink phenomenon of sc
An analysis of the kink phenomenon of scattering parameter S22 in RF power mosfets for system-on-chip (SOC) applications
✍ Yo-Sheng Lin; Shey-Shi Lu πŸ“‚ Article πŸ“… 2003 πŸ› John Wiley and Sons 🌐 English βš– 183 KB

## Abstract In this paper, the kink effect in scattering parameter __S__~22~ of RF power MOSFETs with drain‐to‐spacer offset is explained quantitatively for the first time. Our results show that for RF power MOSFETs the output impedance can be represented by a β€œshifted” series RC circuit at low fre