2-D simulation and analysis of temperature effects on electrical parameters degradation of power RF LDMOS device

✍ Scribed by M.A. Belaïd; K. Ketata; M. Gares; J. Marcon; K. Mourgues; M. Masmoudi

• Book ID: 103861530
• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 437 KB
• Volume: 253
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2006.10.040

✦ Synopsis

This paper presents a synthesis of temperature effects on power RF Laterally Diffused (LD) MOS performances, which can modify and degrade transistor physical and electrical behaviour. In this work, the temperature influence on device electrical characteristics is discussed with regard to physical limits for device operation. A developed 2-D structure was implemented and simulated using the physical simulator Silvaco-Atlas to explain the observed data and offer insight into the physical origin of LDMOS temperature behaviour. The temperature dependence of most important electrical parameters such as channel current I ds , threshold voltage V th and inter-electrodes capacitances (C ds , C gs ) is investigated. The temperature effects on mobility, electron concentration, electric field, current flow lines and Fermi level are taken into account. Finally, initial failure analysis is discussed.