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Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs

โœ Scribed by Yigletu, Fetene Mulugeta; Khandelwal, Sourabh; Fjeldly, Tor A.; Iniguez, Benjamin


Book ID
127242285
Publisher
IEEE
Year
2013
Tongue
English
Weight
841 KB
Volume
60
Category
Article
ISSN
0018-9383

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A physics-based model of AlGaN/GaN High Electron Mobility Transistor (HEMT) is developed for the analysis of DC and microwave characteristics. Large-and small-signal parameters are calculated for a given device dimensions and operating conditions. Spontaneous and piezoelectric polarizations at the h