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Comment on “variable range hopping in Si:P at very low temperature” surface conduction in Si:P

✍ Scribed by Y. Ootuka; F. Komori; Y. Monden; S. Kobayashi; W. Sasaki


Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
131 KB
Volume
36
Category
Article
ISSN
0038-1098

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Analysis of Variable-Range Hopping Condu
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The low-temperature electrical conductivity sT of uncompensated insulating Si:P with P concentration N just below the metal±insulator transition (MIT), i.e. 3X0 Â 10 18 cm À3 $ N $ 3X5 Â 10 18 cm À3 , was measured between 0.05 and 5 K. With decreasing N, sT shows a crossover from Mott variable-range