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Variable range hopping in Si:P at very low temperature

✍ Scribed by Y. Ootuka; F. Komori; Y. Monden; S. Kobayashi; W. Sasaki


Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
209 KB
Volume
33
Category
Article
ISSN
0038-1098

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The low-temperature electrical conductivity sT of uncompensated insulating Si:P with P concentration N just below the metalΒ±insulator transition (MIT), i.e. 3X0 Γ‚ 10 18 cm Γ€3 $ N $ 3X5 Γ‚ 10 18 cm Γ€3 , was measured between 0.05 and 5 K. With decreasing N, sT shows a crossover from Mott variable-range