Coherent leakage current in mesoscopic MIS-type capacitors

✍ Scribed by P.N. Racec; E.R. Racec; G.A. Nemnes; Ulrich Wulf

• Book ID: 104420698
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 243 KB
• Volume: 6
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/s1369-8001(03)00079-9

✦ Synopsis

We study the transport properties of metal-insulator-semiconductor-type quantum devices with a back gate located close to the field induced two-dimensional electron gas (2DEG). These devices allow for a detailed analysis of the coupling between the quantum system and the contacts (top-and back gate) which we consider as classical particle reservoirs with infinite conductivity. The transport properties are described in the Landauer-B .

uttiker formalism and the Hartree approximation is used for the self-consistent calculations of the ground state. Decreasing the width of the insulator barrier, at low temperatures a leakage tunneling current starts to flow. The states of the 2DEG provide a resonant tunneling level for the vertical transport between back-and top gate. We analyze the effect of the resonance on the current and on the capacitance of the system. Analytical calculations based on our previous theory on resonant transport allow for a better numerical implementation of the model and for a detailed understanding of the electronic states.