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Delayed currents and interaction effects in mesoscopic capacitors

โœ Scribed by Ringel, Zohar; Imry, Y.; Entin-Wohlman, O.

Book ID
121218176
Publisher
The American Physical Society
Year
2008
Tongue
English
Weight
305 KB
Volume
78
Category
Article
ISSN
1098-0121

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We study the transport properties of metal-insulator-semiconductor-type quantum devices with a back gate located close to the field induced two-dimensional electron gas (2DEG). These devices allow for a detailed analysis of the coupling between the quantum system and the contacts (top-and back gate)