## Abstract Durch Pyrolyse von Ga (CH~3~)~3~AsH~3~H~2~ wurden GaAs‐Epitaxieschichten auf (111)‐, (110)‐ und (100)‐Ge‐Substraten abgeschieden. In dieser Arbeit wird der Einfluß der Wachstumsbedingungen und des Gitterunterschiedes von GaAs und Ge auf die Qualität der GaAs‐Epitaxieschichten beschrie
✦ LIBER ✦
Coherency of the interphase boundary and elastic strain in the epitaxial system Ge/GaAs
✍ Scribed by Alaverdova, O. G. ;Ya. Fuks, M. ;Khazan, L. S. ;Koval, L. P. ;Matveeva, L. A. ;Mikhailov, I. F. ;Soldatenko, N. N. ;Tkhorik, Yu. A.
- Publisher
- John Wiley and Sons
- Year
- 1983
- Tongue
- English
- Weight
- 313 KB
- Volume
- 75
- Category
- Article
- ISSN
- 0031-8965
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