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Vapor transport and epitaxial growth of Ge in a Ge/GeI4 closed system by the forced flux method

✍ Scribed by J.C. Launay; C. Salducci; R. Cadoret


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
604 KB
Volume
74
Category
Article
ISSN
0022-0248

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