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Coalescence of InP Epitaxial Lateral Overgrowth by MOVPE with V/III Ratio Variation

✍ Scribed by Nick Julian, Phil Mages, Chong Zhang, Jack Zhang, Stephan Kraemer, Susanne Stemmer, Steven Denbaars, Larry Coldren, Pierre Petroff, John Bowers

Book ID
113087355
Publisher
Springer US
Year
2012
Tongue
English
Weight
627 KB
Volume
41
Category
Article
ISSN
0361-5235

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Growth of In 0.52 Al 0.48 As epitaxial layers on InP(100) substrates by molecular beam epitaxy at a wide range of arsenic overpressure (V/III flux ratio from 30 to 300) is carried out. Analysis performed using low-temperature photoluminescence (PL) and double-axis X-ray diffraction (XRD) showed a st