CMOS gates with regenerative action at one of inputs
β Scribed by B.L. Dokic; A.J. Iliskovic; Z.V. Bundalo
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 189 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0026-2692
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β¦ Synopsis
Novel CMOS gate circuits are proposed with the regenerative action at one input only. A Schmitt trigger is built in the inside of the conventional NOR or NAND gate instead of a CMOS transistor pair. There is a hysteresis only if the input which appertains to the Schmitt trigger is active. Otherwise, there is no positive feedback and the circuit acts as a conventional NOR or NAND gate.
π SIMILAR VOLUMES
The effect of a thin Si layer insertion at W/La 2 O 3 interface on the electrical characteristics of MOS capacitors and transistors is investigated. A suppression in the EOT increase can be obtained with Si insertion, indicating the inhibition of diffusion of oxygen atoms into La 2 O 3 layer by form