InSe films are grown at 230-420 β’ C by low-pressure MOCVD from [(tBu) 2 In(Β΅-SetBu)] 2 and [(Me 2 EtC)In(Β΅ 3 -Se)] 4 . Energy-dispersive X-ray analysis shows that films grown from the first precursor are In rich, while those from the second one are stoichiometric InSe. At temperatures Β‘ 330 β’ C ball
β¦ LIBER β¦
ChemInform Abstract: The Chemical Vapor Deposition of Metal Nitride Films Using Modern Metalorganic Precursors
β Scribed by Charles H. Winter
- Publisher
- John Wiley and Sons
- Year
- 2000
- Weight
- 24 KB
- Volume
- 31
- Category
- Article
- ISSN
- 0931-7597
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β¦ Synopsis
Abstract
ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a βFull Textβ option. The original article is trackable via the βReferencesβ option.
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