✦ LIBER ✦

ChemInform Abstract: Chemical Vapor Deposition of RuO2 Thin Films Using the Liquid Precursor Ru(OD)3 (OD: 2,4-Octanedionate).

✍ Scribed by Jung-Hyun Lee; Joo-Young Kim; Shi-Woo Rhee

Publisher: John Wiley and Sons
Year: 2010
Weight: 34 KB
Volume: 31
Category: Article
ISSN: 0931-7597
DOI: 10.1002/chin.200008273

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

ChemInform Abstract: Chemical Vapor Depo

ChemInform Abstract: Chemical Vapor Deposition of HfO2 Thin Films Using a Novel Carbon-Free Precursor. Characterization of the Interface with the Silicon Substrate.

✍ Jaehoo Park; Byoung Keon Park; Moonju Cho; Cheol Seong Hwang; Kiyoung Oh; Doo Yo 📂 Article 📅 2010 🏛 John Wiley and Sons ⚖ 35 KB

ChemInform Abstract: Deposition of Thin

ChemInform Abstract: Deposition of Thin Films of Gallium Sulfide from a Novel Single-Source Precursor, Ga(S2CNMeHex)3, by Low-Pressure Metal—Organic Chemical Vapor Deposition.

✍ Mike R. Lazell; Paul O'Brien; David J. Otway; Jin-Ho Park 📂 Article 📅 2010 🏛 John Wiley and Sons ⚖ 36 KB 👁 1 views

ChemInform Abstract: Chemical Vapor Depo

ChemInform Abstract: Chemical Vapor Deposition of MoS2 and TiS2 Films from the Metal- Organic Precursors Mo(S-tBu)4 and Ti(S-tBu)4.

✍ J. CHEON; J. E. GOZUM; G. S. GIROLAMI 📂 Article 📅 2010 🏛 John Wiley and Sons ⚖ 29 KB

Chemical Vapor Deposition of MoS2 and TiS2 Films from the Metal-Organic Precursors Mo(S-tBu)4 and Ti(S-tBu)4. -The formation of thin MoS2 and TiS2 films by MOCVD from the title precursors is studied and the decomposition mechanism is described. Amorphous films with low levels of oxygen and carbon co