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ChemInform Abstract: Alternative Precursor Systems for the MOCVD of Aluminum Nitride and Gallium Nitride.

✍ Scribed by S. A. RUSHWORTH; J. R. BROWN; D. J. HOULTON; A. C. JONES; V. ROBERTS; J. S. ROBERTS; G. W. CRITCHLOW

Book ID
112038099
Publisher
John Wiley and Sons
Year
2010
Weight
29 KB
Volume
27
Category
Article
ISSN
0931-7597

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Alternative precursor systems for the MO
Alternative precursor systems for the MOCVD of aluminium nitride and gallium nitride
✍ Simon A. Rushworth; Juliette R. Brown; David J. Houlton; Anthony C. Jones; Victo πŸ“‚ Article πŸ“… 1996 πŸ› John Wiley and Sons 🌐 English βš– 695 KB

Two alternative precursor systems have been investigated for the growth of All! and GaN by MOCVD. The first involved the reaction between Me,M (M=AI, Ga) and tert-bgtyismine ('BuNH,), whilst the second route involved the pyrolysis of single-source precursors such as Me,M(NH,) (M=AI, Ga) and [Me,Ga(N