Alternative precursor systems for the MOCVD of aluminium nitride and gallium nitride

✍ Scribed by Simon A. Rushworth; Juliette R. Brown; David J. Houlton; Anthony C. Jones; Victoria Roberts; John S. Roberts; Gary W. Critchlow

• Book ID: 102657925
• Publisher: John Wiley and Sons
• Year: 1996
• Tongue: English
• Weight: 695 KB
• Volume: 6
• Category: Article
• ISSN: 1616-301X
• DOI: 10.1002/(sici)1099-0712(199605)6:3<119::aid-amo229>3.0.co;2-7

✦ Synopsis

Two alternative precursor systems have been investigated for the growth of All! and GaN by MOCVD. The first involved the reaction between Me,M (M=AI, Ga) and tert-bgtyismine ('BuNH,), whilst the second route involved the pyrolysis of single-source precursors such as Me,M(NH,) (M=AI, Ga) and [Me,Ga(NH,)],.

Both routes proved suitable for the deposition of AIN thin films, and epitaxial AIN layers have been deposited on sapphire (0001) from Me,AI(NH,) without any added NH, . Attempts to grow GaN from Me,Ga/'BuNH, mixtures or Me,Ga(NH,) were unsuccessful, leading to the deposition of Ga droplets, although GaN films containing a large excess of Ga were deposited by low-pressure MOCVD from the singlesource precursor [Me,Ga(NH,)],.