ChemInform Abstract: A Method for Studying the Grown-In Defect Density Spectra in Czochralski Silicon Wafers.

✍ Scribed by G. KISSINGER; D. GRAEF; U. LAMBERT; H. RICHTER

• Book ID: 101850949
• Publisher: John Wiley and Sons
• Year: 2010
• Weight: 26 KB
• Volume: 28
• Category: Article
• ISSN: 0931-7597
• DOI: 10.1002/chin.199733001

✦ Synopsis

1997 structure structure (solids and liquids) D 2000

33 -001

A Method for Studying the Grown-In Defect Density Spectra in Czochralski Silicon Wafers.

-The as-grown defect density spectra of Czochralski Si wafers grown in the vacancy rich regime and of wafers with a stacking fault ring 150 and 200 nm in diameter are studied by IR light scattering tomography. These spectra showing the defect density vs. size or stability temperature provide a unique basis for simulation of defect growth during wafer processing and facilitate the selection of wafer material and the design of bulk defect zones for inherent gettering. -(KISSINGER, G.; GRAEF, D.;