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Chemical vapour deposition of silicon under reduced pressure in a hot-wall reactor: Equilibrium and kinetics

✍ Scribed by Francis Langlais; François Hottier; Robert Cadoret


Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
965 KB
Volume
56
Category
Article
ISSN
0022-0248

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A silicon nitride Ðlm was deposited on an Si(100) substrate with a silicon dioxide surface layer from and NH 3 by low-pressure chemical vapour deposition under various conditions. The etching rates of the silicon SiH 2 Cl 2 nitride Ðlms by bu †ered hydroÑuoric acid (BHF) were investigated using Ruth