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Chemical-mechanical polishing of low dielectric constant poly(silsesquioxane): HSQ

✍ Scribed by Wen-Chang Chen; Cheng-Tyng Yen

Book ID
106438283
Publisher
Springer
Year
1999
Tongue
English
Weight
883 KB
Volume
6
Category
Article
ISSN
1022-9760

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Structural control and properties of low
Structural control and properties of low-dielectric-constant poly(hydrogen silsesquioxane) precursors and their thin films
✍ Wei-Chih Liu; Yang-Yen Yu; Wen-Chang Chen πŸ“‚ Article πŸ“… 2003 πŸ› John Wiley and Sons 🌐 English βš– 118 KB πŸ‘ 2 views

## Abstract The precursors of poly(hydrogen silsesquioxane) (PHSSQ) were synthesized from triethoxysilane (TES) through variations in the pH and molar ratio of water to TES (__R__~1~). The molecular structures of the prepared PHSSQ precursors were controlled by the reaction conditions, including th