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Chemical mechanical polishing for selective CVD-W

✍ Scribed by M.T. Wang; W.K. Yeh; M.S. Tsai; W.T. Tseng; T.C. Chang; L.J. Chen; M.C. Chen

Book ID
114194283
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
576 KB
Volume
51
Category
Article
ISSN
0254-0584

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A systematic study of Cu chemical-mechanical polishing (CMP) in terms of process parameters influence, planarization ability of the process and pattern sensitivity of the polish rate was performed. We examined the effects of Cu dishing and SiO z thinning and the reasons for them. Both were found to