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Chemical beam epitaxy of GaInAsP for long-wavelength lasers

✍ Scribed by A. Nutsch; H. Kratzer; B. Torabi; G. Tränkle; G. Abstreiter; G. Weimann

Book ID
108342586
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
361 KB
Volume
183
Category
Article
ISSN
0022-0248

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Long-wavelength strained-layer InGaAs/Ga
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## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri