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Chemical beam epitaxial growth of GaAs from tertiarybutylarsine and triethylgallium precursors

✍ Scribed by M. Ait-Lhouss; J.L. Castaño; J. Piqueras


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
211 KB
Volume
28
Category
Article
ISSN
0921-5107

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New metal-organic precursors for growth
✍ A.C. Jones; P.A. Lane; T. Martin; C.R. Whitehouse 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 699 KB

The growth of GaAs and AI~Ga~ \_wAs by chemical beam epitaxy (CBE) has traditionally utilized triethylgallium (Et3Ga) and either triethylaluminium (Et3A1) or triisobutylaluminium (i-Bu3AI). However, these precursors frequently give rise to layers which are significantly contaminated with carbon and