✦ LIBER ✦

Growth of GaAs and Al GaAs by chemical beam epitaxy—precursor requirements and recent developments

✍ Scribed by Dr. Anthony C. Jones

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Orientations and morphology of Al layers

✍ D. Sun; R. Beanland; T.B.F. Joyce; J.V. Armstrong; T.J. Bullough; P.J. Goodhew 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 649 KB

Growth and diffusion study of carbon dop

✍ T.H. Chiu; J.E. Cunningham; J.A. Ditzenberger; W.Y. Jan 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 130 KB

Uniform selective area growth of GaAs an

✍ P. Legay; F. Alexandre; M. Nunez; J. Sapriel; D. Zerguine; J.L. Benchimol 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 612 KB

Growth, etching, doping and effects of A

✍ C.W. Tu; H.K. Dong; N.Y. Li 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 646 KB

Chemical beam epitaxy growth of GaAs/Ga0

✍ J.C. Garcia; P. Maurel; P. Bove; J.P. Hirtz; A. Barski 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 456 KB

Chemical beam epitaxial growth of InGaAs

✍ Jeong-Rae Ro; Seong-Ju Park; Sung-Bock Kim; El-Hang Lee 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 477 KB