Some comparisons of chemical beam epitaxy InGaAs/InP growth using triethylgallium, triisopropylgallium and triisobutylgallium sources

✍ Scribed by G.J. Davies; P.J. Skevington; J.C. Morris; A.C. Jones; S. Rushworth; J.S. Foord; C.L. Levoguer

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 454 KB
• Volume: 136
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(94)90396-4