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Charge fluctuations at the bonding interface in the silicon-on-insulator structures

โœ Scribed by I. V. Antonova; V. A. Stuchinskii; O. V. Naumova; D. V. Nikolaev; V. P. Popov


Book ID
110137068
Publisher
Springer
Year
2003
Tongue
English
Weight
69 KB
Volume
37
Category
Article
ISSN
1063-7826

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Conductance oscillations near bonded int
โœ O.V. Naumova; I.V. Antonova; V.P. Popov; N.V. Sapognikova; Yu.V. Nastaushev; E.V ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 127 KB

The conductance oscillations have been observed at room temperature in the ultra thin silicon layers of the silicon-on-insulator structures prepared with the bonding and hydrogen slicing technology. An origin of the oscillations is attributed to a formation of tunnel barriers for one type of carrier