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Charge transition levels of the Ge dangling bond defect at Ge/insulator interfaces

✍ Scribed by Peter Broqvist; Audrius Alkauskas; Alfredo Pasquarello

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 198 KB
Volume: 11
Category: Article
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2008.10.010

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