✦ LIBER ✦

Paramagnetic Ge dangling bond type defects at (1 0 0)Si1−xGex/SiO2 interfaces (Invited Paper)

✍ Scribed by A. Stesmans; P. Somers; V.V. Afanas’ev

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 282 KB
Volume: 86
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2009.03.109

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Hydrogen passivation of interfacial gap

Hydrogen passivation of interfacial gap state defects at UHV-prepared ultrathin SiO2 layers on Si(1 1 1), Si(1 1 0), and Si(1 0 0)

✍ Bert Stegemann; Andreas Schoepke; Daniel Sixtensson; Benjamin Gorka; Thomas Luss 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 356 KB

Influence of the oxidation temperature o

Influence of the oxidation temperature on the non-trigonal Ge dangling bonds at the (1 0 0)Ge/GeO2 interface

✍ S. Baldovino; A. Molle; M. Fanciulli 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 562 KB

GeO 2 was proposed as valuable passivation layer at the surface with Ge to integrate oxide with high dielectric constant in Ge-based logic devices. Hence, the identification of the defects present at different Ge/GeO 2 interfaces becomes a mandatory issue to predict the electrical features of device

Ab initio study of the effect of hydroge

Ab initio study of the effect of hydrogen and point defects on arsenic segregation at Si (1 0 0)/SiO2 interfaces

✍ Karthik Ravichandran; Wolfgang Windl 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 135 KB

The previously suggested segregation model for arsenic at Si/SiO 2 interfaces based on a combined trapping/pairing model [J. Dabrowski, H.-J. Müssig, V. Zavodinsky, R. Baierle, M.J. Caldas, Phys. Rev. B 65 ( 2002) 245305] requires high binding energies for interface vacancies, which our results of ∼

Paramagnetic Ge dangling bond type defects at (1&#xa0;0&#xa0;0)Si1−xGex/SiO2 interfaces (Invited Paper)

Paramagnetic Ge dangling bond type defects at (1 0 0)Si1−xGex/SiO2 interfaces (Invited Paper)