✦ LIBER ✦
Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates
✍ Scribed by G. Lucovsky; S. Lee; J.P. Long; H. Seo; J. Lüning
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 814 KB
- Volume
- 254
- Category
- Article
- ISSN
- 0169-4332
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