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Characterization study of GaN-based epitaxial layer and light-emitting diode on nature-patterned sapphire substrate

โœ Scribed by Lin, H.Y.; Chen, Y.J.; Chang, C.L.; Li, X.F.; Kuo, C.H.; Hsu, S.C.; Liu, C.Y.


Book ID
121859644
Publisher
Cambridge University Press
Year
2012
Tongue
English
Weight
353 KB
Volume
27
Category
Article
ISSN
0884-2914

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## Abstract In order to improve GaNโ€based lightโ€emitting diode (LED) performance, a sapphireโ€etched verticalโ€electrode nitride semiconductor (SEVENS) LED is fabricated by a chemical wet etching technique. The lightโ€output power, heat dissipation, and reverse electrostatic discharge (ESD) characteri