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Fabrication of High-Power InGaN-Based Light-Emitting Diode Chips on Pyramidally Patterned Sapphire Substrate

✍ Scribed by Chen, Yi-Ju; Kuo, Cheng-Huang; Tun, Chun-Ju; Hsu, Shih-Chieh; Cheng, Yuh-Jen; Liu, Cheng-Yi

Book ID: 123620816
Publisher: Institute of Pure and Applied Physics
Year: 2010
Tongue: English
Weight: 309 KB
Volume: 49
Category: Article
ISSN: 0021-4922
DOI: 10.1143/JJAP.49.020201

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## Abstract In order to improve GaN‐based light‐emitting diode (LED) performance, a sapphire‐etched vertical‐electrode nitride semiconductor (SEVENS) LED is fabricated by a chemical wet etching technique. The light‐output power, heat dissipation, and reverse electrostatic discharge (ESD) characteri