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Characterization of tantalum silicide contacts on GaAs

✍ Scribed by G. Eftekhari


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
391 KB
Volume
196
Category
Article
ISSN
0040-6090

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NiPt (10% Pt) and Pt were investigated as alternatives to Ni for contact formation to SiGe (20%) source/drain. The germanosilicide phase formation and morphology were studied by means of sheet resistance measurements, X-ray diffraction (XRD) analysis and scanning electron microscopy (SEM) inspection