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Characterization and technology of contacts to GaAs

✍ Scribed by I Mojzes; B Kovács; R Veresegyházy; B Pécz; ZsJ Horváth

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
125 KB
Volume
40
Category
Article
ISSN
0042-207X

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Contacts consisting of tungsten, W0.795i0.21 , W0.675i0.33 and W0.578i0.43 have been produced by sputtering on GaAs(001) and annealed isochronally for 20 min in an arsenic overpressure at temperatures ranging from 500 to 950 °C. Subsequently, solid state reaction products, microstructure and phase m