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Thermal stability of NiPt- and Pt-silicide contacts on SiGe source/drain

✍ Scribed by C. Demeurisse; P. Verheyen; K. Opsomer; C. Vrancken; P. Absil; A. Lauwers

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
445 KB
Volume
84
Category
Article
ISSN
0167-9317

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✦ Synopsis

NiPt (10% Pt) and Pt were investigated as alternatives to Ni for contact formation to SiGe (20%) source/drain. The germanosilicide phase formation and morphology were studied by means of sheet resistance measurements, X-ray diffraction (XRD) analysis and scanning electron microscopy (SEM) inspection. From isothermal anneals it is found that NiPt-and Pt-germanosilicide have better thermal stability compared to Ni-germanosilicide. Improved thermal stability is observed for Ni-, NiPt-and Pt-germanosilicide on B doped SiGe as compared to undoped SiGe. The degradation mechanism of NiPt-and Pt-germanosilicide films on SiGe is morphological degradation while the film is still in the mono-(germanosilicide) phase.

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