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Characterization of Si implants in p-type GaN

โœ Scribed by Sheu, J.K.; Lee, M.L.; Tun, C.J.; Kao, C.J.; Yeh, L.S.; Chang, S.J.; Chi, G.C.

Book ID
114569565
Publisher
IEEE
Year
2002
Tongue
English
Weight
257 KB
Volume
8
Category
Article
ISSN
1077-260X

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This work performs Si ion implantation to activate and convert the electrical conduction of p-GaN films from p-type to n-type. Multiple implantation method is used to form a uniform Si implanted region in the p-type GaN epitaxial layer. Implantation energies for the multiple implantation are 40, 100