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Planar Ultraviolet Photodetectors Formed by Si Implantation into p-GaN

✍ Scribed by Chen, M. C.; Sheu, J. K.; Lee, M. L.; Kao, C. J.; Tun, C. J.; Chi, G. C.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

n[sup +]-GaN formed by Si implantation i

✍ Sheu, J. K.; Tun, C. J.; Tsai, M. S.; Lee, C. C.; Chi, G. C.; Chang, S. J.; Su, 📂 Article 📅 2002 🏛 American Institute of Physics 🌐 English ⚖ 382 KB

Lateral schottky GaN rectifiers formed b

✍ Y. Irokawa; Jihyun Kim; F. Ren; K. H. Baik; B. P. Gila; C. R. Abernathy; S. J. P 📂 Article 📅 2004 🏛 Springer US 🌐 English ⚖ 161 KB

Characterization of silicided shallow n+

✍ M.H. Juang; H.C. Cheng 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 618 KB