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Lateral schottky GaN rectifiers formed by Si+ion implantation

✍ Scribed by Y. Irokawa; Jihyun Kim; F. Ren; K. H. Baik; B. P. Gila; C. R. Abernathy; S. J. Pearton; C. -C. Pan; G. -T. Chen; J. -I. Chyi

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