𝔖 Bobbio Scriptorium
✦   LIBER   ✦

P-type doping in GaN through Be implantation

✍ Scribed by Z. C. Feng; Y. J. Sun; L. S. Tan; S. J. Chua; J. W. Yu; C. C. Yang; W. Lu; W. E. Collins

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
261 KB
Volume
2
Category
Article
ISSN
1862-6351

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

N-type implantation doping of GaN
N-type implantation doping of GaN
✍ Yoshitaka Nakano; Tetsu Kachi; Takashi Jimbo πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 207 KB
p-Type Doping of Cubic GaN by Carbon
p-Type Doping of Cubic GaN by Carbon
✍ As, D.J. ;KοΏ½hler, U. ;LοΏ½bbers, M. ;Mimkes, J. ;Lischka, K. πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 85 KB
Electrical Properties of the Si Implanta
Electrical Properties of the Si Implantation in Mg Doped p-GaN
✍ Wei-Chih Lai; M. Yokoyama; Chiung-Chi Tsai; Chen-Shiung Chang; Jan-Dar Guo; Jian πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 122 KB πŸ‘ 2 views

This work performs Si ion implantation to activate and convert the electrical conduction of p-GaN films from p-type to n-type. Multiple implantation method is used to form a uniform Si implanted region in the p-type GaN epitaxial layer. Implantation energies for the multiple implantation are 40, 100