𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Characterization of semiconductor strained layers grown on (110)-type substrates by high-resolution X-ray diffractometry

✍ Scribed by M. Fatemi

Book ID
108342198
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
486 KB
Volume
169
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

CW Laser Operation of KLu0.945Tm0.055(WO
CW Laser Operation of KLu0.945Tm0.055(WO4)2ndash;KLu(WO4)2 Epilayers Near 2 ΞΌm Silvestre, O.; Pujol, M.C.; Aguilo, M.; Diaz, F.; Mateos, X.; Petrov, V.; Griebner, U. Quantum Electronics, IEEE Journal of Volume: 43 , Issue: 3 Digital Object Identifier: 10.1109/JQE.2006.890383 Publication Year: 2007 , Page(s): 257 - 260 IEEE Journals & Magazines Quick Abstract | PDF (261 KB) Thin epilayers of monoclinic KLu(WO4)2 doped with thulium are grown by liquid phase epitaxy on undoped KLu(WO4 )2 substrates. The epitaxial composites are optically characterized and implemented in a cavity, longitudinally pumped (normal to the layer) by a Ti:sapphire laser. Tunable (1894-2039 nm) continuous-wave laser operation is achieved with maximum slope efficiency as high as 64% with respect to the absorbed pump power at 802 nm. T
✍ C. Masoller; T. Sorrentino; M. Chevrollier; M. Oria πŸ“‚ Article πŸ“… 2007 πŸ› IEEE 🌐 English βš– 262 KB