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Improved model for the determination of strain fields and chemical composition of semiconductor heterostructures by high-resolution X-ray diffractometry

✍ Scribed by L Tapfer; L De Caro; C Giannini; H.-P Schönherr; K.H Ploog


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
497 KB
Volume
98
Category
Article
ISSN
0038-1098

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