An extended subtraction method of scattering parameters for characterizing laser diode is proposed in this paper. The intrinsic response is extracted from the measured transmission coefficients of laser diode, and the parasitics of packaging network and laser chip are determined from the measured re
Characterization of parasitics from scattering parameters of laser diode
β Scribed by Shangjian Zhang; Ninghua Zhu; Yong Liu; Yongzhi Liu
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 297 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0895-2477
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β¦ Synopsis
Abstract
A novel method for characterizing the parasitics of parasitic network is proposed based on the relations between the scattering parameters of a semiconductor laser chip and laser diode. Experiments are designed and performed using our method. The analysis results are in good agreement with the measurements. Furthermore, how the parasitics change with the parasitic element values are investigated. The method only needs reflection coefficient of laser diode to be measured, which is simple because of the developed electricalβdomain measurement techniques. Β© 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1β4, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22987
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