𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Parasitic element dependent scattering parameter evaluation of GaN MESFET

✍ Scribed by Adarsh Singh; Srikanta Bose; Mridula Gupta; R. S. Gupta

Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
206 KB
Volume
33
Category
Article
ISSN
0895-2477

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

Analytical expressions for parasitic‐element‐dependent scattering parameters of a non‐self‐aligned GaN MESFET are evaluated and their variation with frequency is shown. Maximum stable gain and maximum transducer power gain of the device are also evaluated and it is found that a GaN MESFET with the dimensions (1.5 × 100 μm) has maximum stable gain of about 13 dB. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 33: 54–57, 2002; DOI 10.1002/mop.10230

📜 SIMILAR VOLUMES

Admittance parameter and unilateral powe
Admittance parameter and unilateral power-gain evaluation of GaN MESFET for microwave circuit applications
✍ Adarsh Singh; Srikanta Bose; Mridula Gupta; R. S. Gupta 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 264 KB

## Abstract The admittance parameters and unilateral power gain of a nonself‐aligned GaN MESFET incorporating the parasitic elements along with gate‐length modulation are evaluated analytically in the present model. The cutoff frequency of the maximum available gain and the maximum frequency of osc

Semiempirical model for admittance and s
Semiempirical model for admittance and scattering parameters of GaN MESFET for microwave circuit applications
✍ Sneha Kabra; Harsupreet Kaur; Subhasis Haldar; Mridula Gupta; R. S. Gupta 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 515 KB

## Abstract A semiempirical model of GaN MESFET to evaluate admittance parameters, scattering parameters, maximum unilateral transducer power gain, and maximum stable gain is presented. Frequency dependence of the parasitic capacitances obtained by simulations has been utilized to develop the model

Evaluation of scattering parameters, gai
Evaluation of scattering parameters, gain, and feedback-capacitance-dependent noise performance of a pseudomorphic high-electron-mobility transistor
✍ Vandana Guru; H. P. Vyas; Mridula Gupta; R. S. Gupta 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 209 KB

## Abstract This paper evaluates microwave performance in terms of scattering parameters and gains and presents the effect of gate‐to‐drain capacitance __C__~__gd__~ on the noise behavior of a pseudomorphic high‐electron mobility transistor (PHEMT). An analytical expression for __C__~__gd__~ is obt