In order to advance the technique of characterization of shallow acceptors in GaAs by time-resolved photoluminescence (PL), we have studied the decay of nonstationary impurity-related PL under the application of electric field generated by a surface acoustic wave (SAW). The technique exploits the na
Characterization of N,N'-diarachidoylindigo transferred onto a surface acoustic wave device
β Scribed by I. Vikholm; H. Helle
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 453 KB
- Volume
- 178
- Category
- Article
- ISSN
- 0040-6090
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