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Photoluminescence characterization of shallow acceptors in n-GaAs using a surface acoustic wave technique

โœ Scribed by A.E. Nickolaenko; A.M. Gilinsky; A.V. Tsarev; K.S. Zhuravlev

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
227 KB
Volume
340-342
Category
Article
ISSN
0921-4526

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โœฆ Synopsis

In order to advance the technique of characterization of shallow acceptors in GaAs by time-resolved photoluminescence (PL), we have studied the decay of nonstationary impurity-related PL under the application of electric field generated by a surface acoustic wave (SAW). The technique exploits the narrowing and modification of the bands observed in time-delayed PL spectra of moderately doped GaAs taken on the microsecond time scale. Due to the utilization of SAW, we were able to clarify the nature of acceptors in complicated cases of n-type GaAs.

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